Patent · US Expired

Narrow contact design for magnetic random access memory (MRAM) arrays

US6567300B1 · kind B1 · utility

9Cited by

6References

31Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Wolfgang Raberg · Sauerlach, DE
Heinz Hoenigschmid · Starnberg, DE

Key dates

Filing date	Feb 22, 2002
Grant date	May 20, 2003
Priority date	—
Expiry date	Feb 22, 2022

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S977/943
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

An MRAM device (200) and method of manufacturing thereof having second conductive lines (228) with a narrow width. The second conductive lines (228) partially contact the resistive memory elements (214), reducing leakage currents in neighboring cells (214).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.