Sputtering target assembly and method for depositing a thickness gradient layer with narrow transition zone
US6569294B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 20, 2001 |
| Grant date | May 27, 2003 |
| Priority date | — |
| Expiry date | Jun 20, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02T50/60
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Selective deposition of a layer of a material, such as a thick protective overcoat, onto a selected substrate area, such as the inner or CSS landing zone, is achieved using a sputtering target assembly comprising a target/cathode having a planar sputtering surface including an erosion track area, a collimating shield positioned proximate the sputtering surface and surrounding at least a portion of the erosion track area, the collimating shield including an inwardly facing wall, and a blocking shield centrally positioned over the surface of the target/cathode and including an outwardly facing wall, wherein the inwardly facing wall of the collimating shield and the outwardly facing wall, wherein the inwardly facing wall of the collimating shield and the outwardly facing wall of the central blocking shield form an open-ended collimating channel for directing sputtered particles onto the selected substrate area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.