Measurement of different mobile ion concentrations in the oxide layer of a semiconductor wafer
US6569691B1 · kind B1 · utility
55Cited by
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35Claims
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Key dates
| Filing date | Nov 15, 2000 |
| Grant date | May 27, 2003 |
| Priority date | — |
| Expiry date | May 24, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method and apparatus for measuring the concentration of different mobile ions in the oxide layer of a semiconductor wafer from the contact potential shift caused by different ions drifting across the oxide that includes depositing charge (e.g., using a corona discharge device) on the surface of the oxide and heating the wafer to allow different mobile ions in the oxide to drift. The difference in the contact potential measured before and after heating provides an indication of the different mobile ion concentration in the oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.