Patent · US Expired

Method for producing an alternating phase mask

US6569772B2 · kind B2 · utility

0Cited by

3References

8Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Josef Mathuni · Munich, DE
Jurgen Knobloch · Ruderatshofen, DE
Christoph Nolscher · Dresden, DE

Key dates

Filing date	Feb 14, 2002
Grant date	May 27, 2003
Priority date	—
Expiry date	Feb 14, 2022

Classification

Technology area (CPC G)Physics
CPC primaryG03F1/30
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A carrier has a surface with a mask layer thereon. An irradiation-sensitive layer on the mask layer is exposed and developed to form a first exposure structure. The first exposure structure is used as an etching mask while the mask layer is etched. The first exposure structure is subsequently removed. A second irradiation-sensitive layer is applied to the mask layer and the carrier. The second irradiation-sensitive layer is exposed with a first exposure dose and a second exposure dose. The second irradiation-sensitive layer is subsequently developed to form a second exposure structure with a first and second exposure structure thickness. The carrier is etched down to a first etching depth in the region of the first exposure structure thickness and down to a second etching depth in the region of the second exposure structure thickness. The first etching depth is larger than the second etching depth.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.