Method to eliminate striations and surface roughness caused by dry etch
US6569774B1 · kind B1 · utility
31Cited by
19References
36Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 31, 2000 |
| Grant date | May 27, 2003 |
| Priority date | — |
| Expiry date | Aug 31, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31144
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A plasma etch process for forming a high aspect ratio contact opening through a silicon oxide layer is disclosed. The silicon oxide layer is plasma etched using etch gases that include at least one organic fluorocarbon gas. At least one etch gas is used that includes one or more nitrogen-comprising gases to deposit a surface polymeric material during the etching for maintaining a masking layer over the silicon oxide layer. The method of the invention achieves a complete and anistropic etching of a contact opening having a high aspect ratio and the desired dimensions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.