Semiconductor device and method of manufacturing the same
US6570217B1 · kind B1 · utility
46Cited by
7References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 22, 1999 |
| Grant date | May 27, 2003 |
| Priority date | — |
| Expiry date | Apr 22, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
To provide a cavity in the portion of the silicon substrate which lies beneath the channel region of the MOS transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.