Patent · US Expired

Semiconductor device fabrication using a photomask designed using modeling and empirical testing

US6571383B1 · kind B1 · utility

13Cited by

18References

51Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Shahid Butt · Ossining, US
Henning Haffner · Pawling, US
Beate Frankowsky · Höhenkirchen-Siegertsbrunn, DE

Key dates

Filing date	Apr 28, 2000
Grant date	May 27, 2003
Priority date	—
Expiry date	Apr 28, 2020

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S977/887
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A method of fabricating a semiconductor device is outlined in FIG. 3. An ideal (or desired) pattern of a layer of the semiconductor device is designed (305). A first pass corrected pattern is then derived by correcting the ideal patterns for major effects, e.g., aerial image effects (315, 320). A second pass corrected pattern is then derived by correcting the first pass corrected patterns for remaining errors (304). The second pass corrected pattern can be used to build a photomask (345). The photomask can then be used to produce a semiconductor device, such a memory chip or logic chip (350).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.