Nonvolatile memory cell with low doping region
US6573138B1 · kind B1 · utility
8Cited by
38References
42Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 8, 1999 |
| Grant date | Jun 3, 2003 |
| Priority date | — |
| Expiry date | Jul 8, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K19/1778
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A technique of fabricating a nonvolatile device includes forming a low doping region to aid in the reduction of substrate hot electrons. The nonvolatile device may be a floating gate device, such as a Flash, EEPROM, or EPROM memory cell. The low doping region has a lower doping concentration than that of the substrate. By reducing substrate hot electrons, this improves the reliability and longevity of the nonvolatile device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.