Method of recrystallizing an amorphous region of a semiconductor
US6573160B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 26, 2000 |
| Grant date | Jun 3, 2003 |
| Priority date | — |
| Expiry date | May 26, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02667
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Techniques for forming gate dielectric layers (702) overlying amorphous substrate materials are presented. In addition, techniques for low temperature processing operations that allow for the use of amorphous silicon in doping operations are presented. The amorphous silicon regions (604, 606) are formed prior to formation of structures included in the gate structure (804) of the semiconductor device, where the gate structures (804) are preferably formed using low temperature operations that allow the amorphous silicon regions (604, 606) to remain in an amorphous state. Source/drain regions (1004, 1006) are formed in the amorphous silicon regions (604, 606), and then the substrate is annealed to recrystallize the amorphous regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.