Methods for improving carrier mobility of PMOS and NMOS devices
US6573172B1 · kind B1 · utility
177Cited by
4References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 16, 2002 |
| Grant date | Jun 3, 2003 |
| Priority date | — |
| Expiry date | Sep 16, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/601
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods are described for fabricating semiconductor devices, in which a tensile film is formed over PMOS transistors to cause a compressive stress therein and a compressive film is formed over NMOS transistors to achieve a tensile stress therein, by which improved carrier mobility is facilitated in both PMOS and NMOS devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.