Apparatus for growing a silicon ingot
US6574264B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 31, 2001 |
| Grant date | Jun 3, 2003 |
| Priority date | — |
| Expiry date | Dec 31, 2021 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B15/30
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An apparatus for growing a silicon ingot including a graphite crucible in which a quartz crucible is placed, a driving axis connected to a lower part of the graphite crucible to revolve and move the graphite crucible up and down so as to support the graphite crucible, a heating element to heat the graphite crucible, and an insulating wall to protect and thermally isolate the graphite crucible, heating means, and driving axis in part from the external environment. The driving axis includes a hollow axis part having a hollow inside, an insulating axis part attached to the bottom of the hollow axis part to inhibit heat transfer, and a cylindrical axis part attached to the bottom of the insulating axis part. The construction of the driving axis reduces a temperature gradient in the molten silicon, improving uniform heat distribution for increased silicon ingot quality.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.