Film forming apparatus and film forming method
US6576062B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 3, 2001 |
| Grant date | Jun 10, 2003 |
| Priority date | — |
| Expiry date | Jan 3, 2021 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/4584
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A film forming apparatus and method of the present invention include a substrate holding section for holding a plurality of substrates in a plane within a chamber, first and second process gas discharge sections provided opposite to the substrate holding section to discharge first and second process gases, a rotation mechanism for rotating the substrate holder, and a heater for heating the substrates. While the substrates are rotating as the substrate holding section rotates, the substrate holding section, first and second mono atomic layers are alternately stacked on the corresponding substrates. A compound film is therefore formed through a reaction involved under heating.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.