Time-lapsed IC defect analysis using liquid crystal
US6576195B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 8, 2000 |
| Grant date | Jun 10, 2003 |
| Priority date | — |
| Expiry date | Mar 8, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N21/21
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Defect analysis of an integrated circuit die is enhanced using a method and system that make possible the detection of defect-related heat generation in the die. According to an example embodiment of the present invention, a semiconductor die having a liquid crystal layer is analyzed by detecting a liquid crystal phase change caused by heating the die. The heating causes a first circuit region and a second circuit region to effect a separate phase change in corresponding areas of the liquid crystal layer. A detector is adapted to use time-lapsed analysis to detect the liquid crystal phase change in the area corresponding to the second circuit region before the corresponding areas cease to be separately detectable.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.