Tri-tone mask process for dense and isolated patterns
US6576376B1 · kind B1 · utility
2Cited by
5References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 7, 2001 |
| Grant date | Jun 10, 2003 |
| Priority date | — |
| Expiry date | Jun 24, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/32
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An exemplary embodiment of the disclosure relates to a method of integrated circuit fabrication involving phase shifting materials. This method can include providing a layer of chrome; providing a layer of phase shifting material over the layer of chrome; providing open spaces in the layer of chrome and layer of phase shifting material according to a pattern; removing selected open spaces proximate other open spaces; and transferring the pattern of spaces to the integrated circuit wafer. The portion of the pattern removed by the removing step is transferred to the integrated circuit wafer by side lobe printing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.