Semiconductor device and method therefor
US6576532B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 30, 2001 |
| Grant date | Jun 10, 2003 |
| Priority date | — |
| Expiry date | Nov 30, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A heteroepitaxial structure is made using nanocrystals that are formed closer together than normal lithography patterning would allow. The nanocrystals are oxidized and thus selectively etchable with respect to the substrate and surrounding material. In one case the oxidized nanocrystals are removed to expose the substrate at those locations and selective epitaxial germanium is then grown at those exposed substrate locations. The inevitable formation of the misfit dislocations does minimal harm because they are terminated at the surrounding material. In another case the surrounding material is removed and the germanium is epitaxially grown at the exposed substrate where the surrounding material is removed. The resulting misfit dislocations in the germanium terminate at the oxidized nanocrystals. By using nanocrystals that are able to be formed much closer together than is available for other features through lithography, the misfits are prevented from extending so far as to create harmful threading dislocations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.