Patent · US Expired

Technique for high efficiency metalorganic chemical vapor deposition

US6576538B2 · kind B2 · utility

3Cited by
12References
30Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 30, 2001
Grant dateJun 10, 2003
Priority date—
Expiry dateAug 30, 2021

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D1/694
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

A technique for more efficiently forming conductive elements, such as conductive layers and electrodes, using chemical vapor deposition. A conductive precursor gas, such as a platinum precursor gas, having organic compounds to improve step coverage is introduced into a chemical vapor deposition chamber. A reactant is also introduced into the chamber that reacts with residue organic compounds on the conductive element so as to remove the organic compounds from the nucleating sites to thereby permit more efficient subsequent chemical vapor deposition of conductive elements.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.