Inventor · Boise, ID, US

Sam Yang

30Patents
9h-index
9Co-inventors
68Inventor score

Filing activity: Apr 21, 1997 → Jul 25, 2018

Most-cited inventions

PatentTitleAreaCited byStatus
US6670256B2 Metal oxynitride capacitor barrier layer Electricity 105 Expired
US6417537B1 Metal oxynitride capacitor barrier layer Electricity 73 Expired
US6596583B2 Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers Electricity 63 Expired
US6746930B2 Oxygen barrier for cell container process Electricity 44 Expired
US6524912B1 Planarization of metal container structures Electricity 28 Expired
US6617248B1 Method for forming a ruthenium metal layer Electricity 23 Expired
US7378719B2 Low leakage MIM capacitor Emerging Cross-Sectional Technologies 14 Expired
US6727140B2 Capacitor with high dielectric constant materials and method of making Electricity 12 Expired
US6833576B2 Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers Electricity 10 Expired
US7368343B2 Low leakage MIM capacitor Emerging Cross-Sectional Technologies 9 Expired
US7018675B2 Method for forming a ruthenium metal layer Electricity 8 Expired
US6631069B2 Metal oxynitride capacitor barrier layer Electricity 7 Expired
US5890366A High level oxygen air conditioning Emerging Cross-Sectional Technologies 6 Expired
US7053462B2 Planarization of metal container structures Electricity 5 Expired
US6664584B2 Metal oxynitride capacitor barrier layer Electricity 5 Expired
US6664583B2 Metal oxynitride capacitor barrier layer Electricity 5 Expired
US6676756B1 Technique for high efficiency metalorganic chemical vapor deposition Electricity 4 Expired
US6803621B2 Oxygen barrier for cell container process Electricity 4 Expired
US7015527B2 Metal oxynitride capacitor barrier layer Electricity 3 Expired
US6576538B2 Technique for high efficiency metalorganic chemical vapor deposition Electricity 3 Expired
US8470665B2 Low leakage MIM capacitor Emerging Cross-Sectional Technologies 2 Active
US7253076B1 Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers Electricity 2 Expired
US7435641B2 Low leakage MIM capacitor Emerging Cross-Sectional Technologies 2 Active
US7214618B2 Technique for high efficiency metalorganic chemical vapor deposition Electricity 1 Expired
US10774448B2 Method of manufacturing a fabric Textiles; Paper 1 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.