Semiconductor device capacitor with high permittivity tantalum pentoxide/niobium pentoxide dielectric
US6576928B2 · kind B2 · utility
9Cited by
2References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 16, 2001 |
| Grant date | Jun 10, 2003 |
| Priority date | — |
| Expiry date | Aug 16, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/68
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
By using a solid solution of tantalum pentoxide and niobium pentoxide as a dielectric film installed between upper electrode and lower electrode in a capacitor which is used in a semiconductor device, the capacitor structure can be simplified to improve reliability of the semiconductor device while reducing the production cost thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.