Vertical semiconductor component with source-down design and corresponding fabrication method

US6576953B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventor

• Franz Hirler · Isen, DE

Key dates

• Filing date: Jan 23, 2001
• Grant date: Jun 10, 2003
• Expiry date: Jan 26, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/516

Abstract

The present invention provides a semiconductor component having a substrate (10) of a first conduction type (n+); provided on the substrate (10), an optional first layer (20) of the second conduction type (p+) as body connection region; provided on the first layer (20) or the substrate (10), a second layer (30) of the second conduction type (p) as body region; provided on the second layer (30), a third layer (40) of the first conduction type (n) as drain region; a trench (140) reaching down to the substrate (10); a gate structure (90, 100) provided in the trench (140); and a source region (130) of the first conduction type (n+), said source region being provided in the second layer (30) in the periphery of the trench (140); the source region (130) being short-circuited with the first layer (20) and the substrate (10) by a conductive layer (120) provided in the lower region of the trench.