Multi-bit magnetic memory device
US6577529B1 · kind B1 · utility
43Cited by
6References
34Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 3, 2002 |
| Grant date | Jun 10, 2003 |
| Priority date | — |
| Expiry date | Sep 3, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/71
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory cell includes a conductor clad with ferromagnetic material; first and second spacer layers on opposite sides of the clad conductor; a first data layer on the first spacer layer; and a second data layer on the second spacer layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.