Semiconductor laser with lateral light confinement by polygonal surface optical grating resonator
US6577661B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 18, 2002 |
| Grant date | Jun 10, 2003 |
| Priority date | — |
| Expiry date | Feb 18, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/125
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser with lateral optical cavity based on III-V or II-VI semiconductor compounds and their alloys is suggested. The essence of the disclosure is in the use of polygonal surface optical grating resonator (PGR) for lateral confinement of the light and selective excitation of the chosen optical mode. PGR allows fabricating of single mode semiconductor lasers needed for various applications such as CD and DVD pick up heads, high quality laser printers and others. Also, PGR allows controlled multiple wavelength operation of semiconductor lasers needed for telecommunication purposes. The technological advantage of PGR over traditional mesa-structure or ridge optical cavity resonators is in simplicity of integration of surface optical grating fabrication process into planar semiconductor technology.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.