Apparatus and method for depositing thin film on wafer using atomic layer deposition
US6579372B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 3, 2001 |
| Grant date | Jun 17, 2003 |
| Priority date | — |
| Expiry date | May 3, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T137/4673
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An atomic layer deposition (ALD) thin film deposition apparatus including a reactor in which a wafer is mounted and a thin film is deposited on the wafer, a first reaction gas supply portion for supplying a first reaction gas to the reactor, a second reaction gas supply portion for supplying a second reaction gas to the reactor, a first reaction gas supply line for connecting the first reaction gas supply portion to the reactor, a second reaction gas supply line for connecting the second reaction gas supply portion to the reactor, a first inert gas supply line for supplying an inert gas from an inert gas supply source to the first reaction gas supply line, a second inert gas supply line for supplying the inert gas from the inert gas supply source to the second reaction gas supply line, and an exhaust line for exhausting the gas from the reactor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.