Patent · US Expired

Method and installation for fabricating one-sided buried straps

US6579758B2 · kind B2 · utility

1Cited by

8References

8Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Bernd Gobel · Dresden, DE
Martin Gutsche · Dorfen, DE
Alfred Kersch · Putzbrunn, DE
Werner Steinhogl · Birkenfeld, DE

Key dates

Filing date	Jul 1, 2002
Grant date	Jun 17, 2003
Priority date	—
Expiry date	Jul 1, 2022

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/32139
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Buried straps are produced on one side in deep trench structures. A PVD process is used to deposit masking material in the recess inclined at an angle. As a result, a masking wedge is produced on the buried strap, on one side in the base region of the recess. The masking wedge serves as a mask during a subsequent anisotropic etching step, which is carried out selectively with respect to the masking wedge, for removing the buried strap on one side.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.