Non-volatile semiconductor memory cell having a metal oxide dielectric, and method for fabricating the memory cell

US6580118B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Christoph Ludwig · Radeberg, DE
• Martin Schrems · Langenbruck, DE

Key dates

• Filing date: Dec 10, 2001
• Grant date: Jun 17, 2003
• Expiry date: Dec 10, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/035

Abstract

A non-volatile semiconductor memory cell and an associated method are disclosed, in which a conventional dielectric ONO layer (10) is replaced by a very thin metal oxide layer (6) of WOx and/or TiO2. The high relative dielectric constant of these materials further improves the integration density and the control voltages required for the semiconductor memory cell.