Tungsten target for sputtering and method for preparing thereof
US6582535B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 5, 2001 |
| Grant date | Jun 24, 2003 |
| Priority date | — |
| Expiry date | Dec 5, 2021 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB22F2998/10
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A tungsten powder having a powder specific surface of 0.4 m2/g or more is hot-pressed at a temperature of 1,600° C. or more and then subjected to HIP at a temperature of 1,700° C. or more without capsuling, whereby a tungsten target for sputtering is manufactured that has a relative density of 99% or more and an average crystal grain size of 100 &mgr;m or less. This manufacturing method can manufacture, stably at a low cost, a tungsten target having such a high density and fine crystal structure as cannot be attained by the conventional pressure sintering method, and can greatly decrease the number of particle defects on a film produced by using such a target.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.