Method of reshaping a patterned organic photoresist surface
US6582861B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 16, 2001 |
| Grant date | Jun 24, 2003 |
| Priority date | — |
| Expiry date | Mar 16, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/091
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The invention relates to a method of improving control over the dimensions of a patterned photoresist, which enables better control of the critical dimensions of a photomask or reticle which is fabricated using the patterned photoresist. In addition, the method may be used to enable improved control over the dimensions of a semiconductor device fabricated using a patterned photoresist. In particular, a patterned photoresist is treated with an etchant plasma to reshape the surface of the patterned photoresist, where reshaping includes the removal of “t”-topping at the upper surface of the patterned resist, the removal of standing waves present on patterned surfaces, and the removal of feet which may be present at the base of the patterned photoresist, where the photoresist contacts an underlying layer such as an ARC layer. The method is particularly useful for chemically amplified DUV photoresists, where the presence of “t”-topping, standing waves and foot formation is accentuated in the patterned photoresist as developed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.