Low temperature oxidizing method of making a layered superlattice material

US6582972B1 · kind B1 · utility

Assignees

• Symetrix, Inc. · US
• Matsushita Electronics Corporation · JP

Inventors

• Vikram Joshi · Los Gatos, US
• Jolanta Bozena Celinska · Colorado Springs, US
• Narayan Solayappan · Colorado Springs, US
• Larry D. McMillan · Colorado Springs, US
• Carlos A. Paz de Araujo · Colorado Springs, US
• Koji Arita · Osaka, JP

Key dates

• Filing date: Apr 7, 2000
• Grant date: Jun 24, 2003
• Expiry date: Apr 7, 2020

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02197
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A thin film of precursor for forming a layered superlattice material is applied to an integrated circuit substrate, then a strong oxidizing agent is applied at low temperature in a range of from 100° C. to 300° C. to the precursor thin film, thereby forming a metal oxide thin film. The strong oxidizing agent may be liquid or gaseous. An example of a liquid strong oxidizing agent is hydrogen peroxide. An example of a gaseous strong oxidizing agent is ozone. The metal oxide thin film is crystallized by annealing at elevated temperature in a range of from 500° C. to 700° C., preferably not exceeding 650° C., for a time period in a range of from 30 minutes to two hours. Annealing is conducted in an oxygen-containing atmosphere, preferably including water vapor. Treatment by ultraviolet (UV) radiation may precede annealing. RTP in a range of from 500° C. to 700° C. may precede annealing.