Plasma etching of silicon using fluorinated gas mixtures
US6583063B1 · kind B1 · utility
43Cited by
22References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 5, 1999 |
| Grant date | Jun 24, 2003 |
| Priority date | — |
| Expiry date | Mar 5, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32137
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of etching silicon using a plasma generated from a gas comprising fluorine (F), oxygen (O), hydrogen (H) and carbon (C).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.