Low contamination high density plasma etch chambers and methods for making the same
US6583064B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 21, 2002 |
| Grant date | Jun 24, 2003 |
| Priority date | — |
| Expiry date | Mar 21, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12347
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing chamber having a chamber liner and a liner support, the liner support including a flexible wall configured to surround an external surface of the chamber liner, the flexible wall being spaced apart from the wall of the chamber liner. The apparatus can include a heater thermally connected to the liner support so as to thermally conduct heat from the liner support to the chamber liner. The liner support can be made from flexible aluminum material and the chamber liner comprises a ceramic material. The flexible wall can include slots which divide the liner support into a plurality of fingers which enable the flexible wall to absorb thermal stresses.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.