Semiconductor device having a low dielectric constant material
US6583070B1 · kind B1 · utility
9Cited by
14References
8Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 8, 2001 |
| Grant date | Jun 24, 2003 |
| Priority date | — |
| Expiry date | Jul 29, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/09701
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device having a reduced resistance-capacitance time constant is formed by treating a dielectric layer to reduce its dielectric constant. Embodiments include exposing a deposited dielectric layer to ionic radiation, as with Helium ion implantation, to form voids within the layer, thereby reducing its dielectric constant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.