Nitride based transistors on semi-insulating silicon carbide substrates

US6583454B2 · kind B2 · utility

Assignee

• Cree, Inc. · US

Inventors

• Scott Sheppard · Chapel Hill, US
• Scott Allen · Apex, US
• John Williams Palmour · Raleigh, US

Key dates

• Filing date: Mar 29, 2001
• Grant date: Jun 24, 2003
• Expiry date: Mar 29, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503

Abstract

A high electron mobility transistor (HEMT) is disclosed that includes a semi-insulating silicon carbide substrate, an aluminum nitride buffer layer on the substrate, an insulating gallium nitride layer on the buffer layer, an active structure of aluminum gallium nitride on the gallium nitride layer, a passivation layer on the aluminum gallium nitride active structure, and respective source, drain and gate contacts to the aluminum gallium nitride active structure.