Semiconductor device with a binary alloy bonding layer
US6583514B2 · kind B2 · utility
15Cited by
16References
15Claims
0Family size
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Key dates
| Filing date | Oct 4, 2001 |
| Grant date | Jun 24, 2003 |
| Priority date | — |
| Expiry date | Oct 4, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/014
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor chip. A substrate is arranged in opposition to the semiconductor chip. A first electrode is placed on the semiconductor chip while a second electrode is placed on the substrate. Each of the first and second electrodes is made of the same electrode material. An intermetallic compound layer is formed between the first electrode and the second electrode. The intermetallic compound layer is entirely a binary alloy of the electrode material and a bonding material that was applied to at least one of the first and second electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.