Chemical mechanical polishing slurry
US6585568B2 · kind B2 · utility
21Cited by
5References
8Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Nov 21, 2001 |
| Grant date | Jul 1, 2003 |
| Priority date | — |
| Expiry date | Nov 21, 2021 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23F3/00
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
This invention provides a chemical mechanical polishing slurry for polishing a copper-based metal film formed on an insulating film comprising a concave on a substrate, comprising a polishing material, an oxidizing agent and water as well as a benzotriazole compound and a triazole compound. The polishing slurry may be used in CMP to form a reliable damascene electric connection with excellent electric properties at a higher polishing rate, i.e., a higher throughput while preventing dishing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.