Plasma enhanced chemical vapor deposition method of forming titanium silicide comprising layers
US6586285B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 6, 2002 |
| Grant date | Jul 1, 2003 |
| Priority date | — |
| Expiry date | Mar 6, 2022 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/4404
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A first cleaning is conducted on a plasma enhanced chemical vapor deposition chamber at room ambient pressure. After the first cleaning, elemental titanium comprising layers are chemical vapor deposited on a first plurality of substrates within the chamber using at least TiCl4. Thereafter, titanium silicide comprising layers are plasma enhanced chemical vapor deposited on a second plurality of substrates within the chamber using at least TiCl4 and a silane. Thereafter, a second cleaning is conducted on the chamber at ambient room pressure. In one implementation after the first cleaning, an elemental titanium comprising layer is chemical vapor deposited over internal surfaces of the chamber while no semiconductor substrate is received within the chamber. In another implementation, a titanium silicide comprising layer is chemical vapor deposited over internal surfaces of the chamber while no semiconductor substrate is received within the chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.