Method of forming a zener diode in a npn and pnp bipolar process flow that requires no additional steps to set the breakdown voltage
US6586317B1 · kind B1 · utility
27Cited by
8References
21Claims
0Family size
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Key dates
| Filing date | May 8, 2001 |
| Grant date | Jul 1, 2003 |
| Priority date | — |
| Expiry date | May 17, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/983
Abstract
A zener diode is formed in a bipolar or BiCMOS fabrication process by modifying the existing masks that are used in the bipolar or BiCMOS fabrication process, thereby eliminating the need for a separate doping step. In addition, the reverse breakdown voltage of the zener diode is set to a desired value within a range of values by modifying the area of a new opening in one of existing masks.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.