Method for depositing conformal nitrified tantalum silicide films by thermal CVD
US6586330B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 7, 2002 |
| Grant date | Jul 1, 2003 |
| Priority date | — |
| Expiry date | Jul 6, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28518
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Method for depositing a nitrified tantalum silicide barrier film on a semiconductor device including a silicon-based substrate with recessed features by low temperature thermal CVD of tantalum silicide and subsequent nitrification. The nitrified tantalum silicide barrier film exhibits high conformality and low fluorine or chlorine impurity content. A specific embodiment of the method includes depositing tantalum silicide by TCVD from the reaction of a TaF5 or TaCl5 precursor vapor with silane gas on a 250° C.-450° C. heated substrate, then exposing the tantalum silicide to a thermal NH3 treatment or an NH3— or N2-containing plasma treatment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.