Patent · US Expired

Method for preventing etching-induced damage to a metal oxide film by patterning the film after a nucleation anneal but while still amorphous and then thermally annealing to crystallize

US6586348B2 · kind B2 · utility

7Cited by

4References

3Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Walter Hartner · Munich, DE
Gunther Schindler · Hersbruck, DE
Frank Hintermaier · Hersbruck, DE
Volker Weinrich · Paris, FR

Key dates

Filing date	May 7, 2001
Grant date	Jul 1, 2003
Priority date	—
Expiry date	May 7, 2021

Classification

Technology area (CPC H)Electricity
CPC primaryH10D1/682
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

After an SBT layer is precipitated onto a substrate, the SBT layer is structured as a still amorphous layer. Only subsequently is it subjected to a crystallization process. Layers produced in this manner have a relatively high degree of dielectric strength and have no stoichiometric deviations on the etched edges.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.