Relaxed InxGa1-xAs layers integrated with Si
US6589335B2 · kind B2 · utility
5Cited by
16References
20Claims
0Family size
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Key dates
| Filing date | Feb 8, 2001 |
| Grant date | Jul 8, 2003 |
| Priority date | — |
| Expiry date | Mar 3, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02546
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of processing semiconductor materials and a corresponding semiconductor structure, including providing a virtual substrate of a GaAs epitaxial film on a Si substrate, and epitaxially growing a relaxed graded layer of InxGa1−xAs at a temperature ranging upwards from about 600° C. with a subsequent process for planarization of the InGaAs alloy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.