Nitride layer forming methods
US6589414B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 4, 2001 |
| Grant date | Jul 8, 2003 |
| Priority date | — |
| Expiry date | Jun 4, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Nitride layer formation includes a method wherein a material is electrodeposited on a substrate and converted, at least in part, to a layer comprising nitrogen and the electrodeposited material. The electrodepositing may occur substantially selective on a conductive portion of the substrate. Also, the converting may comprise exposing the electrodeposited material to a nitrogen-comprising plasma. Chromium nitride and chromium oxynitride are examples of nitrogen-comprising materials. Copper or gold wiring of an integrated circuit are examples of a substrate. The processing temperature during the electrodepositing and the converting may be selected not to exceed 500° C. The thickness and composition of the nitride layer may be effective to limit diffusion of the wiring through the nitride layer. A diffusion barrier forming method may include forming a patterned layer of integrated circuit copper wiring over a substrate. The copper wiring may be exposed to a chromium-ion-comprising environment while applying an electric current to the copper wiring to deposit chromium on the copper wiring. The chromium may be converted to a chromium-nitride-comprising diffusion barrier using a nitr…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.