Process for preventing deformation of patterned photoresist features
US6589709B1 · kind B1 · utility
15Cited by
20References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 28, 2001 |
| Grant date | Jul 8, 2003 |
| Priority date | — |
| Expiry date | Jun 26, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28123
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for preventing deformation of patterned photoresist features during integrated circuit fabrication is disclosed herein. The process includes stabilizing the patterned photoresist features by a flood electron beam before one or more etch processes. The stabilized patterned photoresist features resist pattern bending, breaking, collapsing, or deforming during a given etch process. The electron beam stabilization can be applied to the patterned photoresist features a plurality of times as desired.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.