Method for making programmable resistance memory element using silylated photoresist
US6589714B2 · kind B2 · utility
384Cited by
3References
34Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 26, 2001 |
| Grant date | Jul 8, 2003 |
| Priority date | — |
| Expiry date | Sep 16, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/20
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of making a electrically operated programmable resistance memory element. A silylated photoresist sidewall spacer is used as a mask for form raised portions on an edge of a conductive layer. The modified conductive layer is used as an electrode for the memory element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.