Silicon-on-insulator (SOI)electrostatic discharge (ESD) protection device with backside contact plug

US6589823B1 · kind B1 · utility

Assignee

• Advanced Micro Devices, Inc. · US

Inventors

• Stephen G. Beebe · Los Altos, US
• Srinath Krishnan · Campbell, US
• Zoran Krivokapic · Santa Clara, US

Key dates

• Filing date: Feb 22, 2001
• Grant date: Jul 8, 2003
• Expiry date: Jun 7, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D89/611

Abstract

An electrostatic discharge (ESD) protection device for a silicon-on-insulator (SOI) integrated circuit having a silicon substrate with a buried oxide layer disposed thereon and an active layer disposed on the buried oxide layer having active regions defined by isolation trenches. The ESD protection device is formed on the SOI integrated circuit and has an anode and a cathode formed within one of the active regions and coupled respectively to a first and a second node; and a backside contact plug adjacent and in thermal contact with at least one of the anode or the cathode, the backside contact plug traversing the buried oxide layer to thermally couple the one of the active regions and the substrate.