Tilted counter-doped implant to sharpen halo profile
US6589847B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 3, 2000 |
| Grant date | Jul 8, 2003 |
| Priority date | — |
| Expiry date | Aug 3, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/021
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention is directed to a method of forming halo implant regions in a semiconductor device. In one illustrative embodiment, the method comprises forming a gate electrode above a semiconducting substrate, the substrate being doped with a first type of dopant material, and forming halo implant regions in the substrate adjacent the gate electrode by performing at least the following steps: performing a first angled implant process using a dopant material that is of a type opposite to the first type of dopant material and performing a second angled implant using a dopant material that is of the same type as the first type of dopant material. The method concludes with performing at least one additional implantation process to further form source/drain regions for the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.