Si seasoning to reduce particles, extend clean frequency, block mobile ions and increase chamber throughput
US6589868B2 · kind B2 · utility
533Cited by
13References
14Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 8, 2001 |
| Grant date | Jul 8, 2003 |
| Priority date | — |
| Expiry date | May 1, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/913
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the present invention include a method of depositing an improved seasoning film. In one embodiment the method includes, prior to performing a substrate processing operation, forming a layer of silicon over an interior surface of the substrate processing chamber as opposed to a layer of silicon oxide. In certain embodiments, the layer of silicon comprises at least 70% atomic silicon, is deposited from a high density silane (SinH2n+2) process gas and/or is deposited from a plasma having a density of at least 1×1011 ions/cm3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.