Electrostatic discharge protection structure
US6590261B2 · kind B2 · utility
3Cited by
10References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 10, 2001 |
| Grant date | Jul 8, 2003 |
| Priority date | — |
| Expiry date | Oct 10, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An electrostatic discharge (ESD) protection structure is disclosed. The ESD protection structure of the present invention uses a resistance capacitance (RC) circuit to distinguish an overshoot phenomenon caused by the instantaneous power-on from an ESD event, so as to prevent the ESD protection device, such as a P-type modified lateral silicon controlled rectifier (MLSCR), from being triggered unexpectedly by an overshoot phenomenon which results from the power-on under normal operation, and thereby the efficiency of the ESD protection device is promoted.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.