Shin Su
19Patents
9h-index
11Co-inventors
65Inventor score
Filing activity: May 14, 2001 → Dec 1, 2014
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6724677B1 | ESD device used with high-voltage input pad | Electricity | 36 | Expired |
| US6791146B2 | Silicon controlled rectifier structure with guard ring controlled circuit | Electricity | 24 | Expired |
| US6661273B1 | Substrate pump circuit and method for I/O ESD protection | Electricity | 22 | Expired |
| US6933540B2 | ESD protection apparatus and method for dual-polarity input pad | Electricity | 18 | Expired |
| US7187527B2 | Electrostatic discharge conduction device and mixed power integrated circuits using same | Electricity | 17 | Expired |
| US6965504B2 | ESD protection apparatus and method for a high-voltage input pad | Electricity | 16 | Expired |
| US6947267B2 | RC controlled ESD circuits for mixed-voltage interface | Electricity | 11 | Expired |
| USD763755S1 | Rear-view side mirror | General | 11 | Active |
| US6919604B2 | Silicon controlled rectifier structure with guard ring controlled circuit | Electricity | 10 | Expired |
| US6628488B2 | Electrostatic discharge protection circuit | Electricity | 6 | Expired |
| US6809915B2 | Gate-equivalent-potential circuit and method for I/O ESD protection | Electricity | 4 | Expired |
| US6410963B1 | Electrostatic discharge protection circuits with latch-up prevention function | Electricity | 3 | Expired |
| US6590261B2 | Electrostatic discharge protection structure | Electricity | 3 | Expired |
| US7193274B2 | ESD protection structure and method utilizing substrate triggering for a high-voltage tolerant pad | Electricity | 3 | Expired |
| US7012305B2 | Electro-static discharge protection circuit for dual-polarity input/output pad | Electricity | 3 | Expired |
| US7291870B2 | Electrostatic protection circuit | Electricity | 2 | Expired |
| US7829408B2 | Laterally double-diffused metal oxide semiconductor transistor and method for fabricating the same | Electricity | 2 | Active |
| US7525153B2 | Laterally double-diffused metal oxide semiconductor transistor and method for fabricating the same | Electricity | 1 | Active |
| US7573102B2 | ESD protection structure and method utilizing substrate triggering for a high-voltage tolerant pad | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.