Magnetic memory device
US6590803B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 22, 2002 |
| Grant date | Jul 8, 2003 |
| Priority date | — |
| Expiry date | Mar 22, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1675
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic memory device includes a plurality of magnetoresistive elements arranged on a first plane in a matrix form, a plurality of first writing lines which are arranged on a second plane different from the first plane adjacent to the magnetoresistive elements, a first address decoder which selects a desired one from the plurality of first writing lines, a plurality of second writing lines crossing the plurality of first writing lines on a third plane different from the second plane and having parts adjacent to the plurality of magnetoresistive elements on the second plane and parallel to the plurality of first writing lines, and a second address decoder which selects a desired one from the plurality of second writing lines.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.