Method for processing wafers in a semiconductor fabrication system
US6592661B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 25, 1998 |
| Grant date | Jul 15, 2003 |
| Priority date | — |
| Expiry date | Dec 17, 2019 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B31/12
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of manufacturing semiconductor wafers in a processing chamber having at least one radiant heat source is provided. The method includes the steps of applying a predetermined amount of power to the radiant heat source and positioning a wafer within the processing chamber. The predetermined amount of power applied to the at least one radiant heat source is set such that the wafer reaches a predetermined temperature in a predetermined amount of time for carrying out a desired process in the processing chamber. The processing chamber is particularly suited for very low pressure environments and may be used to form HSG in a clustered or non-clustered system. A reflective plate may be used so that the radiated properties of the wafer are substantially independent of the emissivity of the wafer thereby minimizing emissivity variation from one wafer to another. Another plate may be used to form an isothermal cavity between the plate and the wafer to minimize emissivity variation from one wafer to another.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.