Photoresist mask that combines attenuated and alternating phase shifting masks
US6593039B1 · kind B1 · utility
3Cited by
3References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 19, 2001 |
| Grant date | Jul 15, 2003 |
| Priority date | — |
| Expiry date | Aug 23, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/30
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photoresist mask used in the fabrication of integrated circuits, can include a first portion and a second portion. The first portion has a phase shifting material layer and an opaque layer deposed over a transparent layer. The first portion also has trenches in the transparent layer selectively located to provide an alternating phase shifting characteristic. The second portion has the opaque layer deposed over the phase shifting material layer which is deposed over the transparent layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.