Process for etching conductors at high etch rates

US6593244B1 · kind B1 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Yiqiong Wang · معلمی نژاد, US
• Anisul Khan · Sunnyvale, US
• Ajay Kumar · Fairport, US
• Dragan Podlesnik · Palo Alto, US
• Sharma Pamarthy · Hayward, US

Key dates

• Filing date: Sep 11, 2000
• Grant date: Jul 15, 2003
• Expiry date: Sep 11, 2020

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02071
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A process for etching a pattern-masked conductor substrate anisotropically so as to obtain very high etch rates comprising adding a polymer-forming fluorocarbon gas and an etch gas at high flow rates to an etch chamber at etching pressures of 77 millitorr to 100 Torr using a high source power and bias power to the substrate support electrode to form a high density plasma. The gases can be added together, sequentially or alternately.